2-173 product description ordering information typical applications features functional block diagram rf micro devices, inc. 7628 thorndike road greensboro, nc 27409, usa tel (336) 664 1233 fax (336) 664 0454 http://www.rfmd.com optimum technology matching? applied si bjt gaas mesfet gaas hbt si bi-cmos sige hbt si cmos ingap/hbt gan hemt sige bi-cmos 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 nc vcc1 vcc2 gnd gnd gnd1 rf in pd g16 g8 rf out gnd gnd rf out nc nc rf2155 3v programmable gain power amplifier ? analog communication systems ? 900mhz spread spectrum systems ? 400mhz industrial radios ? driver stage for higher power applications ? 3v applications the rf2155 is a 3v medium power programmable gain amplifier ic. the device is manufactured on an advanced gallium arsenide heterojunction bipolar transistor (hbt) process, and has been designed for use as the final rf amplifier in analog cellular phone transmitters or ism applications operating at 915mhz. the device is self-con- tained with the exception of the output matching network and power supply feed line. a two-bit digital control pro- vides 4 levels of power control, in 8db steps. ? single 3v supply ? 500mw cw output power ? 31db small signal gain ? up to 60% efficiency ? digitally controlled output power ? 430mhz to 930mhz frequency range rf2155 3v programmable gain power amplifier RF2155PCBA-41X fully assembled evaluation board 0 rev b8 060921 0.035 0.016 0.010 0.008 8 max 0 min 0.021 0.014 0.392 0.386 0.158 0.150 0.244 0.230 0.069 0.064 0.050 0.060 0.054 -a- 0.009 0.004 package style: standard batwing 9 rohs compliant & pb-free product
2-174 rf2155 rev b8 060921 absolute maximum ratings parameter rating unit supply voltage -0.5 to +5.5 v dc power down voltage (v pd ) -0.5 to +3.3 v dc supply current 500 ma input rf power +10 dbm output load vswr 10:1 ambient operating temperature -30 to +85 c storage temperature -40 to +150 c parameter specification unit condition min. typ. max. overall t=25c, v cc =3.6v, v pd =2.8v, z load =13 , p in =0dbm, freq=915mhz frequency range 430 to 930 mhz maximum cw output power 450 mw v cc =3.6v 300 mw v cc =3.0v small signal gain 31 db second harmonic -30 dbc without external second harmonic trap third harmonic -40 dbc fourth harmonic -36 dbc input vswr 2:1 all gain settings cw efficiency 50 56 % g16=?high?, g8=?high?, p in =0dbm output load vswr 6:1 spurious<-60dbc power control power down ?on? 2.7 2.8 3.0 v voltage supplied to the input power down ?off? 0 0.5 0.8 v voltage supplied to the input pd input current 3.7 5.0 ma only in ?on? state g16, g8 ?on? 2.2 2.5 3.0 v voltage supplied to the input g16, g8 ?off? 0 0.3 0.5 v voltage supplied to the input g16, g8 input current 0.8 1.0 1.6 ma only in ?on? state output power +25.5 +26.5 +28.0 dbm g16=?high?, g8=?high?, p in =0dbm +15.0 +18.5 +21.0 dbm g16=?high?, g8=?low?, p in =0dbm +7.5 +10.5 +13.0 dbm g16=?low?, g8=?high?, p in =0dbm -2.5 +1.5 +4.0 dbm g16=?low?, g8=?low?, p in =0dbm turn on/off time 100 ns power supply power supply voltage 3.6 v specifications 3.0 5.0 v operating limits power supply current 225 300 ma g16=?high?, g8=?high?, p in =0dbm 90 115 ma g16=?high?, g8=?low?, p in =0dbm 37 55 ma g16=?low?, g8=?high?, p in =0dbm 25 35 ma g16=?low?, g8=?low?, p in =0dbm 20 50 110 ma g16=?high?, g8=?high?, no rf in 110 a g16=?low?, g8=?low?, pd=?low? caution! esd sensitive device. rf micro devices believes the furnished information is correct and accurate at the time of this printing. rohs marking based on eudirective2002/95/ec (at time of this printing). however, rf micro devices reserves the right to make changes to its products without notice. rf micro devices does not assume responsibility for the use of the described product(s).
2-175 rf2155 rev b8 060921 pin function description interface schematic 1nc not internally connected. 2vcc1 positive supply for the first stage (driver) amplifier. this is an unmatched transistor collector output. this pin should see an inductive path to ac ground (v cc with a uhf bypassing capacitor). this induc- tance can be achieved with a short, thin microstrip line (approximately equivalent to 0.4nh). at lower frequencies, the inductance value should be larger (longer microstrip line) and v cc should be bypassed with a larger bypass capacitor. this inductance forms a matching network with the amplifier stages, setting th e amplifier's frequency of maximum gain. an additional 1 f bypass capacitor in parallel with the uhf bypass capacitor is also recommended, but placement of this compo- nent is not as critical. a resistor of 39 from this pin to pin 3 is neces- sary to ensure stability under extreme output vswr conditions. 3vcc2 positive supply for the bias circuits. this pin should be bypassed with a single uhf capacitor, placed as close as possible to the package. 4gnd ground connection. keep traces physically short and connect immedi- ately to the ground plane for best performance. 5gnd same as pin 4. 6gnd1 ground return for the first stage; this should be connected to a via very close to the device. 7rf in amplifier rf input. this is a 50 rf input port to the amplifier. to improve the input match over all four gain control settings, an input inductor of 6.8nh should be added. the amplifier does not contain internal dc blocking and, therefore, should be externally dc blocked before connecting to any device which has dc present or which con- tains a dc path to ground. a series uhf capacitor is recommended for the dc blocking. see pin 2. 8pd power down control voltage. when this pin is at 0v, the device will be in power down mode, dissipating minimum dc power. when this pin is at 3v the device will be in full power mode delivering maximum available gain and output power capability. this pin should not, in any circum- stance, be higher than 3.3v. this pin should also have an external uhf and hf bypassing capacitor. 9nc not internally connected. 10 nc not internally connected. 11 rf out amplifier rf output. this is an unma tched collector output of the final amplifier transistor. it is internally connected to pins 11 and 14 to pro- vide low series inductance and flexibility in output matching. bias for the final power amplifier output transistor must also be provided through one of these pins. typically, pin 14 is used to supply bias. a transmission line of approximately 500mils length, followed by a bypass capacitor, is adequate. this pin can also be used to create a second harmonic trap. a uhf and large tantalum (1 f) capacitor should be placed on the power supply side of the bias inductor. pin 11 should be used for the rf output with a matching network that presents the opti- mum load impedance to the pa for maximum power and efficiency, as well as providing dc blocking at the output. 12 gnd same as pin 4. 13 gnd same as pin 4. 14 rf out same as pin 11. 15 g8 rf output power gain control 8db bit (see specification table for logic). the control voltage at this pin should never exceed 3.3v and a logic high should be at least 2.7v. this pin should also have an external uhf bypassing capacitor. rf in vcc1 from bias stages pd to rf stages rf out from bias stages gxx vcc2 to rf stages
2-176 rf2155 rev b8 060921 application schematic 915 mhz pin function description interface schematic 16 g16 rf output power gain control 16db bit (see specification table for logic). the control voltage at this pin should never exceed 3.3v and a logic high should be at least 2.7v. this pin should also have an external uhf bypassing capacitor. same as pin 15. 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 w=55, l=330 mil 3.9 pf 50 33 pf rf out w=20, l=570 mil 33 pf 33 pf 33 pf 16 db ctrl 8 db ctrl v cc 39 w=20, l=180 mil 33 pf 33 pf 6.8 nh 33 pf rf in v cc 33 pf power down board material: fr-4 (er=4.7) h=30 mil impedances are critical at pin 2, 7, 11, and 14
2-177 rf2155 rev b8 060921 evaluation board schematic (download bill of materials from www.rfmd.com.) 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 p2-1 r1 39 c4 33 pf c5 33 pf c6 1 nf c13 1 f c14 1 f l1 6.8 nh 50 strip rf in j1 c1 33 pf l=330 mil, w=55 mil c10 3.9 pf c2 33 pf 50 strip rf out j2 l=570 mil, w=20 mil c2 33 pf p1-1 p2-3 c12 1 nf c7 33 pf c8 33 pf p1-3 c3 33 pf c9 1 nf p1-1 p1-3 p1 pd gnd vb2 1 2 3 p2-1 p2-3 p2 vb1 gnd vcc 1 2 3 2155400 rev -
2-178 rf2155 rev b8 060921 evaluation board layout board size 2.0? x 2.0?
2-179 rf2155 rev b8 060921 pout and icc vs. pin, state 10 (915 mhz, vcc=3.6 v, vpd=3.0 v) -5 0 5 10 15 20 25 -20 -15 -10 -5 0 5 10 pin (dbm) pout (dbm) 0 50 100 150 200 250 300 icc (ma) pout icc pout and icc vs. pin, state 11 (915 mhz, vcc=3.6 v, vpd=3.0 v) 5 10 15 20 25 30 -20 -15 -10 -5 0 5 10 pin (dbm) pout (dbm) 50 100 150 200 250 300 icc (ma) pout icc pout and icc vs. pin, state 01 (915 mhz, vcc=3.6 v, vpd=3.0 v) -10 -5 0 5 10 15 20 -20 -15 -10 -5 0 5 10 pin (dbm) pout (dbm) 0 50 100 150 200 250 300 icc (ma) pout icc pout and icc vs. pin, state 01 (915 mhz, vcc=3.6 v, vpd=3.0 v) -20 -15 -10 -5 0 5 10 -20 -15 -10 -5 0 5 10 pin (dbm) pout (dbm) 0 50 100 150 200 250 300 icc (ma) pout icc pout and efficiency vs. vcc, full gain (915 mhz, pin=0 dbm, vcc=3.6 v, vpd=3.0 v) 25 26 27 28 29 30 3.0 3.5 4.0 4.5 5.0 5.5 vcc (volts) pout (dbm) 45.0 48.0 51.0 54.0 57.0 60.0 efficiency (%) pout efficiency pout vs. temperature, all gain settings (pin=0 dbm, vcc=3.6 v, vpd=3.0 v) -5 0 5 10 15 20 25 30 -25-5 1535557595 temperature (c) pout (dbm) bit1=1;bit2=1 bit1=1;bit2=0 bit1=0;bit2=1 bit1=0;bit2=0
|
